Deformation and removal mechanism of single crystal gallium nitride in nanoscratching
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference41 articles.
1. A survey of wide bandgap power semiconductor devices;Millan;Ieee T. Power Electron.,2014
2. HVPE GaN for high power electronic Schottky diodes;Tompkins;Solid State Electron.,2013
3. Gallium nitride-based complementary logic integrated circuits;Zheng;Nature Electron,2021
4. Selective area regrowth and doping for vertical gallium nitride power devices: materials challenges and recent progress;Fu;Mater. Today,2021
5. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018
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