Ga/Al ratio induced afterglow behavior of Ce3+:GAGG scintillation ceramics-Reference-Cited by-同舟云学术

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Ga/Al ratio induced afterglow behavior of Ce3+:GAGG scintillation ceramics

Published:2024-10 Issue:19 Volume:50 Page:36286-36294
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Tang Yang,Qiang Ming,Lou Wenhui,Ding Yuchong,Lin Hui^ORCID,Hong Ruijin,Zhang Dawei

Publisher

Elsevier BV

Reference44 articles.

1. Development and prospects of garnet ceramic scintillators: a review;Zhu;Journal of Advanced Ceramics,2022

2. Advanced inorganic halide ceramic scintillators;Hawrami;Opt. Mater.,2021

3. Cz grown 2-in. size Ce:Gd3(Al,Ga)5O12 single crystal relationship between Al, Ga site occupancy and scintillation properties;Kamada;Opt. Mater.,2014

4. 2inch diameter single crystal growth and scintillation properties of Ce:Gd3Al2Ga3O12;Kamada;J. Cryst. Growth,2012

5. Scintillation characteristics of GAGG:Ce single-crystalline films grown by liquid phase epitaxy;Chewpraditkul;IEEE Trans. Nucl. Sci.,2018

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