Funder
Korea Semiconductor Research Consortium
Korea Institute of Science and Technology
National Research Council of Science and Technology
Korea Ministry of Trade Industry and Energy
Reference28 articles.
1. Capacitors with an equivalent oxide thickness of < 0.5 nm for nanoscale electronic semiconductor memory;Kim;Adv. Funct. Mater.,2010
2. Future of dynamic random-access memory as main memory;Kim;MRS Bull.,2018
3. Technology scaling challenge and future prospects of DRAM and NAND flash memory;Park,2015
4. 1T-1C dynamic random access memory status, challenges, and prospects;Spessot;IEEE Trans. Electron. Dev.,2020
5. Toward advanced high‐k and electrode thin films for DRAM capacitors via atomic layer deposition;Kim;Adv. Mater. Technol.,2023