Author:
Fujimura Yu,Kawakatsu Takahiro,Morimoto Masayuki,Asakawa Hitoshi,Nakagawa Keizo,Yoshioka Tomohisa
Subject
Materials Chemistry,Physical and Theoretical Chemistry,Spectroscopy,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Cramming more components onto integrated circuits, Reprinted from Electronics, volume 38, number 8, April 19, 1965, pp.114 ff.;Moore;IEEE Solid-State Circuits Soc. Newsl.,2006
2. Short channels and mobility control of GAA multi stacked nanosheets through the perfect removal of SiGe and post treatment;Bae;Electron. Lett.,2020
3. Wet Alkaline Etching of Si Selectively to SiGe for sub 10 nm Gate All Around Architectures;Rachidi;ECS J. Solid State Sci. Technol.,2021
4. A simulation study on the impact of InP barrier on InGaAs/InP hetero junction gate all around MOSFET;Vimala;J. Nano Res.,2019
5. WET and Siconi® cleaning sequences for SiGe epitaxial regrowth;Raynal;Mater. Sci. Eng. B Solid-State Mater. Adv. Technol.,2020
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