Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage-Reference-Cited by-同舟云学术

Improvement of single event transients effect for a novel AlGaN/GaN HEMT with enhanced breakdown voltage

Published:2024-06 Issue:2 Volume:9 Page:100692
ISSN:2468-2179
Container-title:Journal of Science: Advanced Materials and Devices
language:en
Short-container-title:Journal of Science: Advanced Materials and Devices

Author:

Sun Shuxiang,Xie Xintong,Zhang Pengfei,Zhao Zhijia,Wei Jie,Luo Xiaorong

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference29 articles.

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3. Optimization of enhancement mode P-type Mg-doped In0.2Ga0.8N cap gate DH-HEMT for low-loss high power efficient boost converter circuits;Tarauni;Mater. Sci. Semicond. Process.,2019

4. A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications;Murugapandiyan;Micro Nanostruct.,2023

5. Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: a critical review;Ajayan;Mater. Sci. Semicond. Process.,2022

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1. Assessing single event upset susceptibility of InAlN HEMT with cap layer under heavy-ion environment;Microsystem Technologies;2024-07-25

2. Improvement of DC and RF characteristics for a novel AlGaAs/InGaAs HEMT with decreased single event effect;Journal of Ovonic Research;2024