Chapter 2 Electronic and thermoelectric properties of Half-Heusler alloys-Reference-Cited by-同舟云学术

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Chapter 2 Electronic and thermoelectric properties of Half-Heusler alloys

Published:2001 Issue: Volume: Page:37-75
ISSN:0080-8784
Container-title:Recent Trends in Thermoelectric Materials Research II
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Author:

Poon G. Joseph

Publisher

Elsevier

Reference54 articles.

1. Optical Properties of the Vacancy MNiSn Lattices (M=Ti, Zr, Hf);Aliev;Pis'Ma. V. Zh. Eksp. Teor. Fiz.,1988

2. Gap at the Intermetallic Vacancy System RNiSn (R=Ti, Zr, Hf);Aliev;Z. Phys. B,1989

3. Narrow Band in the Intermetallic Compounds MniSn (M=Ti, Zr, Hf);Aliev;Z. Phys. B,1990

4. Electronic Properties of Quasicrystals Experimental;Berger,1994

5. Thermoelectric Properties of Sb-Doping in the TiNiSn1−xSbx System;Bhattacharya,1999

Cited by 92 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive computational insights into the properties of Ni-based quaternary heusler alloys;Physica B: Condensed Matter;2024-12

2. A computational analysis of thermoelectric behaviour of $$d^{0}$$ half-Heusler alloys GeKCa and GeKSr;The European Physical Journal Plus;2024-05-03

3. An Ab-initio study on spin gapless semiconducting in novel quaternary heusler alloys RhCoVZ (Z = Al, Ga, and In): Insights into stability, electronic, magnetic, thermoelectric, and optical properties;Materials Today Communications;2024-03

4. Comprehensive Computational Insights into the Properties of Ni-Based Quaternary Heusler Alloys;2024

5. A newly proposed full Heusler alloy Ir₂VZ(Z=Sn, In) suitable for high-temperature thermoelectric applications: A DFT approach;Modern Physics Letters B;2023-10-13

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