Study on inhibition effect of 3-amino-1, 2, 4-triazole on chemical mechanical polishing of GLSI low-techology node molybdenum barrier layer

Author:

Wu Pengfei,Zhang BaoguoORCID,Li Haoran,Wang Ye,Xie Mengchen,Li Ye,Wang Wantang

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. Chemical interactions and mechanisms of different pH regulators on copper and cobalt removal rate of copper film CMP for GLSI;Zhou;ECS Journal of Solid State Science and Technology,2019

2. Handbook of Silicon Wafer Cleaning Technology;Reinhardt,2018

3. Study on the film forming mechanism, corrosion inhibition effect and synergistic action of two different inhibitors on copper surface chemical mechanical polishing for GLSI;Zhou;Appl. Surf. Sci.,2019

4. Roles and mechanism analysis of chitosan as a green additive in low-tech node copper film chemical mechanical polishing;Zhou;Colloids Surf. A Physicochem. Eng. Asp.,2020

5. Study on effective methods and mechanism of inhibiting cobalt removal rate in chemical mechanical polishing of GLSI low-tech node copper film;Zhou;ECS Journal of Solid State Science and Technology,2019

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