Advances in positron annihilation spectroscopy of Si, Ge and their alloys-Reference-Cited by-同舟云学术

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Advances in positron annihilation spectroscopy of Si, Ge and their alloys

Published:2012-12 Issue:6 Volume:15 Page:669-674
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Slotte Jonatan,Tuomisto Filip

Publisher

Elsevier BV

Reference31 articles.

1. Decay Features of Positrons in Semiconductors

2. Positron Annihilation in Semiconductors

3. Positron spectroscopy of defects in metals and semiconductors;Hautojärvi,1995

4. Identification of Defects in Semiconductors;Saarinen,1998

5. Positron Annihilation in Semiconductors;Krause-Rehberg,1999

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defects in Ge and GeSn and their impact on optoelectronic properties;Applied Physics Reviews;2024-12-01

2. Research progress of coincidence Doppler broadening of positron annihilation measurement technology in materials;Acta Physica Sinica;2024

3. Understanding the structure-property correlation of tin oxide nanoparticles synthesized through the sol-gel technique;Journal of Luminescence;2023-01

4. Charge transition level of GeP_b1 centers at interfaces of SiO₂/Ge_xSi_1−x/SiO₂ heterostructures investigated by positron annihilation spectroscopy;physica status solidi (b);2014-09-24

5. Impact of strain on the passivation efficiency of Ge dangling bond interface defects in condensation grown SiO2/GexSi1−x/SiO2/(100)Si structures with nm-thin GexSi1−x layers;Applied Surface Science;2014-02

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