Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: Partial, laser, total, and one-step annealings-Reference-Cited by-同舟云学术

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Influence of the annealing schemes on the formation and stability of Ni(Pt)Si thin films: Partial, laser, total, and one-step annealings

Published:2024-12 Issue: Volume:184 Page:108806
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Morris Anak Fabriziofranco^ORCID,Campos Andréa,Grégoire Magali,Estellon Adrien,Lombard Marc,Guyot Thomas,Guillemin Sophie,Mangelinck Dominique

Publisher

Elsevier BV

Reference35 articles.

1. Towards implementation of a nickel silicide process for CMOS technologies;Lavoie;Microelectron. Eng.,2003

2. Challenges of nickel silicidation in CMOS technologies;Breil;Microelectron. Eng.,2015

3. SiGe metallization challenges and developments in context of FD-SOI and CoolcubeTM integrations;Nemouchi,2016

4. Kinetics study of NiPt(10 at.%)/Si0.7Ge0.3 solid state reactions;Bourjot;Microelectron. Eng.,2014

5. Phase formation and thermal stability of ultrathin nickel-silicides on Si(100);De Keyser;Appl. Phys. Lett.,2010

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