Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference48 articles.
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3. Tailoring the microwave dielectric properties of MgNb2O6 and Mg4Nb2O9 ceramics;Khalam;Int. J. Appl. Ceram. Technol.,2007
4. Characterization and microwave dielectric properties of M2+Nb2O6 ceramics;Pullar;J. Am. Ceram. Soc.,2005
5. Filamentary resistive switching in amorphous and polycrystalline Nb2O5 thin films;Mähne;Solid State Electron.,2012
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