Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth-Reference-Cited by-同舟云学术

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Advantages of a slim vertical gas channel at high SiHCl3 concentrations for atmospheric pressure silicon epitaxial growth

Published:2018-11 Issue: Volume:87 Page:13-18
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Irikura Kenta,Muroi Mitsuko,Yamada Ayami,Matsuo Miya,Habuka Hitoshi,Ishida Yuuki,Ikeda Shin-Ichi,Hara Shiro

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference24 articles.

1. 450 mm silicon wafers challenges –wafer thickness scaling;Goldstein;ECS Trans.,2008

2. 40 years of progress with an extraordinary future;Meyer;Electrochem. Soc. Proc.,2005

3. Photolithography for minimal Fab system;Khumpuang;IEEJ Trans. Sens. Micro.,2013

4. Analyses on cleanroom-free performance and transistor manufacturing cycle time of minimal Fab;Khumpuang;IEEE Trans. Semicond. Manuf.,2015

5. Silicon chemical vapor deposition process using a half-inch silicon wafer for Minimal Manufacturing System;Li;Phys. Procedia,2013

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