Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs-Reference-Cited by-同舟云学术

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Ex-situ n-type doped carrier-injection layers in direct bandgap GeSn LEDs

Published:2024-11 Issue: Volume:182 Page:108654
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Casiez L.,Cardoux C.,Acosta Alba P.,Bernier N.,Richy J.,Pauc N.,Calvo V.,Coudurier N.,Rodriguez P.,Concepción O.,Buca D.,Frauenrath M.,Hartmann J.M.,Chelnokov A.,Reboud V.

Publisher

Elsevier BV

Reference43 articles.

1. Group IV Photonics: Driving Integrated Optoelectronics;Soref,2016

2. Vertical GeSn nanowire MOSFETs for CMOS beyond silicon;Liu;Commun. Eng.,2023

3. Germanium tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate;Lei;IEEE Trans. Electron. Dev.,2018

4. CMOS-compatible bias-tunable dual-band detector based on GeSn/Ge/Si coupled photodiodes;Simola;ACS Photonics,2021

5. Review of Si-based GeSn CVD growth and optoelectronic applications;Miao;Nanomaterials,2021

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