The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning-Reference-Cited by-同舟云学术

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The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning

Published:2024-06 Issue: Volume:175 Page:108279
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Zhao Xinyu,Yan Mei,Wang FangYuan,Han Xinyu,Tan Baimei,Zhao Jiadong,Liu Renhao,Shi Yunhui

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Hebei Province

National Key Research and Development Program of China

Publisher

Elsevier BV

Reference36 articles.

1. Effect of lanthanum doping in ceria abrasives on chemical mechanical polishing selectivity for shallow trench isolation;Praveen;Mater. Sci. Semicond. Process.,2015

2. Shallow Trench isolation chemical mechanical planarization: a review;Srinivasan;ECS Journal of Solid State Science and Technology,2015

3. A study of the colloidal stability of mixed abrasive slurries and their role in CMP;Lin;J. Electrochem. Soc.,2012

4. Shallow trench isolation chemical mechanical planarization: a Review;Srinivasan;ECS J. Solid State Sci. Technol.,2015

5. Effect of organic additives on ceria slurry in shallow trench isolation chemical mechanical planarization;Kang;Jpn. J. Appl. Phys.,2005

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