A review of silicon carbide CMOS technology for harsh environments-Reference-Cited by-同舟云学术

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A review of silicon carbide CMOS technology for harsh environments

Published:2024-08 Issue: Volume:178 Page:108422
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Wang Hui,Lai Pengyu,Islam Md Zahidul,Hasan Abu Shahir Md Khalid,Di Mauro Anthony,Anika Nur-E-Afra,Russell Robert,Feng Zhuowen,Chen Kevin,Faruque Asif,White Thomas,Chen Zhong,Mantooth H. Alan^ORCID

Funder

ARPA-E

National Science Foundation

Publisher

Elsevier BV

Reference159 articles.

1. A comprehensive review of wide band-gap semiconductors technology;Thakur;Int. J. Adv. Res. Innov. Idea. Educ.,2023

2. Characterization and Modeling of SiC Integrated Circuits for Harsh Environment;Kimoto,2017

3. Prospects of wide-gap chalcopyrites for thin film photovoltaic modules;Herberholz;Sol. Energy Mater. Sol. Cell.,1997

4. 2-SiC material properties;Kimoto,2019

5. Physical properties of silicon carbide;Kimoto,2014

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comprehensive Analysis of Unclamped-Inductive-Switching-Induced Electrical Parameter Degradations and Optimizations for 4H-SiC Trench Metal-Oxide-Semiconductor Field-Effect Transistor Structures;Micromachines;2024-06-09

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