1. Fabrication of high aspect ratio doping region by using trench filling of epitaxial Si growth;Yamauchi,2001
2. Influence of trench etching on super junction devices fabricated by trench filling;Yamauchi,2004
3. Development of a 60 μm deep trench and refill process for manufacturing Si-based high-voltage super-junction structures;Bartolf,2013
4. Above 500V class Superjunction MOSFETs fabricated by deep trench etching and epitaxial growth;Iwamoto,2005
5. Above 700V superjunction MOSFETs fabricated by deep trench etching and epitaxial growth;Zehong;J. Semiconduct.,2010