The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal-Reference-Cited by-同舟云学术

The improvement of atomic layer deposited SiO2/4H-SiC interfaces via a high temperature forming gas anneal

Published:2021-02 Issue: Volume:122 Page:105527
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Renz A.B.^ORCID,Vavasour O.J.,Gammon P.M.,Li F.,Dai T.,Antoniou M.,Baker G.W.C.,Bashar E.,Grant N.E.,Murphy J.D.,Mawby P.A.,Shah V.A.

Funder

EPSRC

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference32 articles.

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5. Comparison of thermal and atomic-layer-deposited oxides on 4H-SiC after post-oxidation-annealing in nitric oxide;Kim;Appl. Phys. Lett.,2012

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