Bismuth surfactant growth of the dilute nitride GaNxAs1−x
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Surfactant enhanced growth of GaNAs and InGaNAs using bismuth
2. Long-wavelength GaInNAs(Sb) lasers on GaAs
3. Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers
4. Growth of Bismuth Layers on Si(100) Surfaces
5. Growth of In[sub x]Ga[sub 1−x]As/GaAs heterostructures using Bi as a surfactant
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1. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024
2. First-principles predictions of the physical properties of GaNxAs1–x: Materials for futuristic optoelectronic devices;Pramana;2023-09-02
3. Bismuth surfactant-enhanced III-As epitaxy on GaAs(111)A;Semiconductor Science and Technology;2023-08-10
4. Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy;Materials Science and Engineering: B;2023-08
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