Crystal structure and electronic structure of GaSe1−xSx series layered solids-Reference-Cited by-同舟云学术

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Crystal structure and electronic structure of GaSe1−xSx series layered solids

Published:2005-06 Issue:3-4 Volume:279 Page:321-328
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ho C.H.,Wu C.C.,Cheng Z.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference29 articles.

1. Semiconductor Physics and Applications;Balkanski,2000

2. Crystallography and Crystal Chemistry of Materials with Layered Structures;Levy,1976

4. Crystal structure and interatomic distances in GaSe

5. Interatomic distances in GaSexS1−x

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1. Photoelectric Properties of GaS1−xSex (0 ≤ x ≤ 1) Layered Crystals;Nanomaterials;2024-04-18

2. Light emission, structure-phase evolution, and photocatalytic behavior in full-series multilayered GaTe1−xSx (0 ≤ x ≤ 1) with direct-transition edge;Materials Today Advances;2024-03

3. Structural and optical characterization of GaS1−Se layered mixed crystals grown by chemical vapor transport;Materials Today Communications;2023-12

4. Temperature-dependent current–voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction;Applied Physics A;2023-07-04

5. Near-infrared to red-light emission and carrier dynamics in full series multilayer GaTe1−xSex (0≤x≤1) with structural evolution;npj 2D Materials and Applications;2023-01-26

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