Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0001) by vertical hot-wall chemical vapor deposition-Reference-Cited by-同舟云学术

Effects of C/Si ratio in fast epitaxial growth of 4H–SiC(0001) by vertical hot-wall chemical vapor deposition

Published:2005-08 Issue:2-4 Volume:281 Page:370-376
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Fujiwara H.,Danno K.,Kimoto T.,Tojo T.,Matsunami H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. SiC power Schottky and PiN diodes

2. Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour and T. Hayashi, Proceedings of International Symposium on Power Semiconductor Devices & ICs, Osaka, 2001, p. 27.

3. Step-Controlled Epitaxial Growth of High-Quality SiC Layers

4. Growth of SiC by ?Hot-Wall? CVD and HTCVD

5. Growth and Characterisation of SiC Power Device Material

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Designing silicon carbide heterostructures for quantum information science: challenges and opportunities;Materials for Quantum Technology;2022-05-23

2. Influence of carrier trapping on radiation detection properties in CVD grown 4H-SiC epitaxial layers with varying thickness up to 250 µm;Journal of Crystal Growth;2022-04

3. Defect Inspection Techniques in SiC;Nanoscale Research Letters;2022-03-04

4. Stability and molecular pathways to the formation of spin defects in silicon carbide;Nature Communications;2021-11-03

5. Characterization of morphological defects related to micropipes in 4H-SiC thick homoepitaxial layers;Journal of Crystal Growth;2021-08