Sublimation growth of AlN bulk crystals in Ta crucibles-Reference-Cited by-同舟云学术

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Sublimation growth of AlN bulk crystals in Ta crucibles

Published:2005-07 Issue:1 Volume:281 Page:93-100
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mokhov E.N.,Avdeev O.V.,Barash I.S.,Chemekova T.Yu.,Roenkov A.D.,Segal A.S.,Wolfson A.A.,Makarov Yu.N.,Ramm M.G.,Helava H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Hydride vapour phase epitaxy growth and characterisation of GaN layers

2. In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy

3. Growth of high purity AlN crystals

4. X-ray characterization of bulk AIN single crystals grown by the sublimation technique

5. Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals

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1. Evolution of 2-inch AlN single crystal grown on SiC seed via PVT method;Vacuum;2024-08

2. In-grown and irradiation-induced Al and N vacancies in 100 keV H⁺ implanted AlN single crystals;Japanese Journal of Applied Physics;2024-07-01

3. Evolution of 2-Inch Aln Single Crystal Grown on Sic Seed Via Pvt Method;2024

4. Research Progress in Optoelectronics Integration Technology Based on Piezoelectric Effect(Invited);ACTA PHOTONICA SINIC;2023

5. Aluminum nitride photonic integrated circuits: from piezo-optomechanics to nonlinear optics;Advances in Optics and Photonics;2023-03-29

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