Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt-Reference-Cited by-同舟云学术

Investigations of interstitial generations near growth interface depending on crystal pulling rates during CZ silicon growth by detaching from the melt

Published:2016-01 Issue: Volume:434 Page:128-137
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Abe T.,Takahashi T.,Shirai K.,Zhang X.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. The mechanism of swirl defects formation in silicon

2. The effect of mass transfer on the temperature gradient of a crystal growing from melt

3. Temperature oscillation at the growth interface in silicon crystals

4. Global modelling of heat transfer in crystal growth furnaces

5. Diffusion of Point Defects in Silicon Crystals during Melt-Growth. II -One Diffusor Model-

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