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Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

  • Published:2011-03 Issue:1 Volume:318 Page:183-186
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Wang Biao,Zhang Xinpeng,Ma Xiangyang,Yang Deren

Funder

the Natural Science Foundation of China

973 Program”

Zhejiang Provincial Natural Science Found

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon;physica status solidi (RRL) – Rapid Research Letters;2022-12-14

2. Basic characterization and electrical properties of Si crystals;Crystal Growth of Si Ingots for Solar Cells Using Cast Furnaces;2020

3. Gettering and Passivation of Metals in Silicon and Germanium;Metal Impurities in Silicon- and Germanium-Based Technologies;2018

4. Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient;Solid State Phenomena;2015-10

5. Enhanced internal gettering in n/n+ epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrate;Journal of Materials Science: Materials in Electronics;2014-06-14
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