The effect of graphite components and crucible coating on the behaviour of carbon and oxygen in multicrystalline silicon
Author:
Funder
HiQuaSil Project
Sächsische Aufbaubank
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Modelling of incorporation of O, N, C and formation of related precipitates during directional solidification of silicon under consideration of variable processing parameters;Reimann;Journal of Crystal Growth,2010
2. Material-induced shunts in multicrystalline silicon solar cells;Breitenstein;Semiconductors,2007
3. A TEM study of SiC particles and filaments precipitated in multicrystalline Si for solar cells;Lotnyk;Solar Energy Materials and Solar Cells,2008
4. On-wafer investigations of SiC and Si3N4 inclusions in multicrystalline silicon grown by directional solidification;Du;Solar Energy Materials and Solar Cells,2008
5. Fast-forming boron–oxygen-related recombination center in crystalline silicon;Bothe;Applied Physics Letters,2005
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