Role of carbon in n-type bulk GaN crystals-Reference-Cited by-同舟云学术

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Role of carbon in n-type bulk GaN crystals

Published:2024-04 Issue: Volume:632 Page:127641
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Amilusik M.,Zajac M.,Fijalkowski M.,Iwinska M.,Sochacki T.,Wlodarczyk D.,Somakumar A.K.,Jakiela R.,Suchocki A.,Bockowski M.

Funder

Department of the Navy

National Science Centre Poland

National Centre for Research and Development

Publisher

Elsevier BV

Reference40 articles.

1. High performance and high reliability AlGaN/GaN HEMTs

2. The 2018 GaN power electronics roadmap

3. High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

4. Handbook of Crystal Growth;Paskova,2015

5. Growth of bulk GaN crystals by the Na-flux point seed technique

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

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