Growth mechanism of a batch deposited SiC coating on large-size graphite plates based on multi-scale simulation-Reference-Cited by-同舟云学术

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Growth mechanism of a batch deposited SiC coating on large-size graphite plates based on multi-scale simulation

Published:2024-11 Issue: Volume:646 Page:127851
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zheng Centao,Li Haiming,Li Hongyan,Liu Hongli,Wei Dongqing,Zhang Baolian,Liao Xiaolan,Li Huan,Zhong Yong,Yang Taisheng

Funder

Tianjin Research Innovation Project for Postgraduate Students

Natural Science Foundation of Tianjin Municipality

National Natural Science Foundation of China

Publisher

Elsevier BV

Reference63 articles.

1. Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD;Xia;vac.,2023

2. Investigation of the surface optimization of β-Ga2O3 films assisted deposition by pulsed MOCVD;Zhang;Scripta Mater.,2022

3. MOCVD Growth and characterization of Be-Doped GaN;McEwen;ACS Appl. Electron. Mater.,2022

4. Effects of pressure on GaN growth in a specific warm-wall MOCVD reactor;Niu;Crystengcomm.,2023

5. Design and regularity research of MOCVD heating plate based on experiments and simulations;Li;vac.,2020

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