Nucleation mechanism of gas-phase InGaN nanoparticles-Reference-Cited by-同舟云学术

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Nucleation mechanism of gas-phase InGaN nanoparticles

Published:2024-03 Issue: Volume:629 Page:127570
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Su Peng,Sun Yukang,Zhang Hong,Zheng Guangyu,Zuo Ran,Liu Lijun^ORCID

Publisher

Elsevier BV

Reference24 articles.

1. M. Dauelsberg. Progress in Modeling of III-Nitride MOVPE. [J] Progress in Crystal Growth and Characterization of Materials, 66(2020)100486.

2. Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode [J];Guo;Chin. Phys. B,2017

3. Prospects and challenges of mini-LED, OLED, and micro-LED displays;Hsiang;J. Soc. Inf. Disp.,2021

4. High efficiency of III-nitride micro-light emitting diodes by sidewall passivation using atomic layer deposition;Wong;Opt. Express,2018

5. Quantum chemistry study on gas reactions involved with radicals in GaN-MOVPE process;Liu;J. Synthet. Cryst.,2021

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