Bulk AlN crystal growth by direct heating of the source using microwaves-Reference-Cited by-同舟云学术

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Bulk AlN crystal growth by direct heating of the source using microwaves

Published:2004-02 Issue:1-4 Volume:262 Page:168-174
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhuang D.,Edgar J.H.,Liu B.,Huey H.E.,Jiang H.X.,Lin J.Y.,Kuball M.,Mogal F.,Chaudhuri J.,Rek Z.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Nitride light-emitting diodes

2. Growth and applications of Group III-nitrides

3. Properties of Group III Nitrides,1994

4. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy

5. Growth of high purity AlN crystals

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1. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024

2. Homogenization of Radial Temperature by a Tungsten Sink in Sublimation Growth of 45 mm AlN Single Crystal;Materials;2020-12-06

3. Influence of irradiation temperature on properties change of AlN ceramics;Vacuum;2018-12

4. Properties of AlN film grown on Si (111);Journal of Crystal Growth;2016-02

5. A first-principles study of the mechanical properties of AlN with Raman verification;Computational Materials Science;2016-02

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