Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates-Reference-Cited by-同舟云学术

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Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Published:2014-02 Issue: Volume:387 Page:16-22
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Liu Fang,Huang Li,Kamaladasa Ranga,Picard Yoosuf N.,Preble Edward A.,Paskova Tanya,Evans Keith R.,Davis Robert F.,Porter Lisa M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference40 articles.

1. Formation Mechanism of Nanotubes in GaN

2. Pit formation in GaInN quantum wells

3. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells

4. Surface energetics, pit formation, and chemical ordering in InGaN alloys

5. Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

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