Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template-Reference-Cited by-同舟云学术

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Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template

Published:2013-10 Issue: Volume:381 Page:37-42
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Khan D.T.,Takeuchi S.,Kikkawa J.,Nakamura Y.,Miyake H.,Hiramatsu K.,Imai Y.,Kimura S.,Sakata O.,Sakai A.

Funder

Japan Synchrotron Radiation Research Institute (JASRI)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

3. High quantum efficiency AlGaN solar-blind p-i-n photodiodes

4. Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

5. HVPE growth of AlN on trench- patterned 6H-SiC substrates

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural characterization of AlN thin films grown on sapphire by atomic layer deposition;Thin Solid Films;2023-05

2. High quality AlN film grown on a nano-concave-circle patterned Si substrate with an AlN seed layer;Applied Physics Letters;2020-07-13

3. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction;Journal of Applied Physics;2018-01-10

4. Reduction of threading dislocation density for AlN epilayer via a highly compressive-stressed buffer layer;Journal of Crystal Growth;2017-02

5. Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique;Applied Physics Express;2016-10-11

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