Influence of the barrier composition in GaN/InxAl1−xN quantum wells properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference30 articles.
1. Anomalous Ion Channeling inAlInN/GaNBilayers: Determination of the Strain State
2. Effects of strain and composition on the lattice parameters and applicability of Vegard’s rule in Al-rich Al1−xInxN films grown on sapphire
3. Growth and optical and structural characterizations of GaN on freestanding GaN substrates with an (Al,In)N insertion layer
4. Power electronics on InAlN/(In)GaN: Prospect for a record performance
5. High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, electronic, optical, thermodynamic and elastic properties of the zinc-blende Al x In 1-x N ternary alloys: A first principles calculations;Journal of Physics and Chemistry of Solids;2018-08
2. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT;ECS Journal of Solid State Science and Technology;2018
3. Structural and compositional evolutions of InxAl1−xN core–shell nanorods grown on Si(111) substrates by reactive magnetron sputter epitaxy;Nanotechnology;2015-05-06
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