Scattering mechanisms in undoped In0.75Ga0.25As/In0.75Al0.25As two-dimensional electron gases
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Application of split-gate structures as tunable spin filters
2. Large Rashba Splitting in InAs Quantum Wells due to Electron Wave Function Penetration into the Barrier Layers
3. Ga0.25In0.75As/InP quantum wells with extremely high and anisotropic two‐dimensional electron gas mobilities
4. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
5. Very high electron mobilities at low temperatures in InxGa1−xAs/InyAl1−yAs HEMTs grown lattice-mismatched on GaAs substrates
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2. Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells;Nanomaterials;2024-03-27
3. Effect of Strain on Electron Transport and Quantum Lifetimes in InxGa1−xAs/In0.52Al0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures;physica status solidi (b);2024-03-03
4. Improvement of Electron Transport in Pseudomorphic In0.52Al0.48As/InyGa1-y As Double Quantum Well Structure;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07
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