Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase

Author:

Razzokov A.Sh.ORCID,Saidov A.S.,Allabergenov B.,Choi B.,Petrushenko S.I.,Dukarov S.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference22 articles.

1. Tailoring heterovalent interface formation with light;Park;Sci. Rep.,2017

2. Solid solutions in the Pseudobinary (III-V)-(II-VI) systems and their optical energy Gaps;Yim;J. Appl. Phys.,1969

3. Obtaining epitaxial layers of solid solution (GaAs)1–x(ZnSe)x from a lead solution-melt;Saidov;Letters to ZhTF,2001

4. Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy;Elleuch;J. Cryst. Growth,2019

5. Sn doped GaAs by CBE using tetramethyltin;Núñez,2011

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