Numerical study on the effects of inner crucible window heights on the growth of silicon in a continuous Czochralski process
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique;Kitashima;J. Cryst. Growth,2004
2. A numerical study of the influence of feeding polycrystalline silicon granules on melt temperature in the continuous Czochralski process;Ono;J. Cryst. Growth,1993
3. Thermal stress inhibition in double crucible Czochralski large diameter crystal growth;Louchev;J. Cryst. Growth,2005
4. A continuous Czochralski silicon crystal growth system;Wang;J. Cryst. Growth,2003
5. Solidification interface shape control in a continuous Czochralski silicon growth system;Wang;J. Cryst. Growth,2006
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