Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films-Reference-Cited by-同舟云学术

Influence of 3C–SiC/Si (111) template properties on the strain relaxation in thick GaN films

Published:2014-07 Issue: Volume:398 Page:23-32
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Cordier Yvon,Frayssinet Eric,Portail Marc,Zielinski Marcin,Chassagne Thierry,Korytov Maxim,Courville Aimeric,Roy Sébastien,Nemoz Maud,Chmielowska Magdalena,Vennéguès Philippe,David Schenk H.P.,Kennard Mark,Bavard Alexis,Rondi Daniel

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference44 articles.

1. AlGaN/GaN HFETs fabricated on 100-mm GaN on silicon () substrates

2. AlGaN/GaN HEMT grown on large size silicon substrates by MOVPE capped with in-situ deposited Si3N4

3. Growth stresses and cracking in GaN films on (111) Si grown by metalorganic chemical vapor deposition. II. Graded AlGaN buffer layers

4. Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications

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