Development of GaN wafers via the ammonothermal method-Reference-Cited by-同舟云学术

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Development of GaN wafers via the ammonothermal method

Published:2014-10 Issue: Volume:403 Page:3-6
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Letts Edward,Hashimoto Tadao,Hoff Sierra,Key Daryl,Male Keith,Michaels Mathew

Funder

Small Business Innovative Research and small Business Technology Transfer

National Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

2. Growth of gallium nitride by hydride vapor-phase epitaxy

3. Bulk GaN crystals grown by HVPE

4. Morphology and characterization of GaN single crystals grown in a Na flux

5. Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential;Materials;2024-06-25

2. Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model;Materials;2022-06-10

3. An overview of nanomaterials in fuel cells: Synthesis method and application;International Journal of Hydrogen Energy;2022-05

4. Improving the GaN Growth Rate by Optimizing the Nutrient Basket Geometry in an Ammonothermal System Based on Numerical Simulation;ACS Omega;2022-03-10

5. Assessment of dislocation reduction on 100 mm diameter bulk GaN grown by the NEAT method;Japanese Journal of Applied Physics;2022-03-01

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