Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application-Reference-Cited by-同舟云学术

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Annealing effects on the composition and disorder of Ga(N,As,P) quantum wells on silicon substrates for laser application

Published:2014-09 Issue: Volume:402 Page:169-174
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gies S.,Zimprich M.,Wegele T.,Kruska C.,Beyer A.,Stolz W.,Volz K.,Heimbrodt W.

Funder

German Science Foundation (DFG)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system

2. Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

3. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

4. GaP-nucleation on exact Si (001) substrates for III/V device integration

5. Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications;Future Directions in Silicon Photonics;2019

2. In Situ Thermal Annealing Transmission Electron Microscopy (TEM) Investigation of III/V Semiconductor Heterostructures Using a Setup for Safe Usage of Toxic and Pyrophoric Gases;Microscopy and Microanalysis;2017-08

3. Growth of high N containing GaNAs/GaP/BGaAsP multi quantum well structures on Si (0 0 1) substrates;Journal of Crystal Growth;2017-06

4. Time-resolved photoluminescence of Ga(NAsP) multiple quantum wells grown on Si substrate: Effects of rapid thermal annealing;Thin Solid Films;2016-08

5. Influence of growth temperature and disorder on spectral and temporal properties of Ga(NAsP) heterostructures;Journal of Applied Physics;2016-04-14

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