Progress in periodically oriented III-nitride materials
Author:
Funder
Office of Naval Research
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference47 articles.
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3. Enhancement-Mode GaN MIS-HEMTs with n-GaN/i-AlN/n-GaN triple cap layer and high- k gate dielectrics;Kanamura;IEEE Electron Device Lett.,2010
4. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors;Chang;J. Vac. Sci. Technol. B,2010
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2. Site control of quantum emitters in gallium nitride by polarity;Applied Physics Letters;2021-01-11
3. Polarity control and fabrication of lateral polarity structures of III-nitride thin films and devices: progress and prospects;Journal of Physics D: Applied Physics;2020-09-21
4. Polarity Control and Nanoscale Optical Characterization of AlGaN-Based Multiple-Quantum-Wells for Ultraviolet C Emitters;ACS Applied Nano Materials;2020-05-06
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