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HVPE homoepitaxial growth of high quality bulk GaN using acid wet etching method and its mechanism analysis

  • Published:2016-11 Issue: Volume:454 Page:59-63
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Liu Nanliu,Cheng Yutian,Wu Jiejun,Li Xingbin,Yu Tongjun,Xiong Huan,Li Wenhui,Chen Jiao,Zhang Guoyi

Funder

National High Technology of China

Science and Technology Planning Project of Guangdong Province of China

Science and Technology Planning Project of Dongguan

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Bulk GaN based violet light-emitting diodes with high efficiency at very high current density;Cich;Appl. Phys. Lett.,2012

2. High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes;David;Appl. Phys. Lett.,2014

3. Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation;Hurni;Appl. Phys. Lett.,2015

4. Advantages of employing the freestanding GaN substrates with low dislocation density for white light-emitting diodes;Yoshizumi;SEI Tech. Rev.,2012

5. Low leakage Schottky rectifiers fabricated on homoepitaxial GaN;Lu;Appl. Phys. Lett.,2007

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