Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime-Reference-Cited by-同舟云学术

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Influence of crystalline defects in Czochralski-grown Si multicrystal on minority carrier lifetime

Published:2007-08 Issue:2 Volume:306 Page:452-457
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Taishi Toshinori,Hoshikawa Takeshi,Yamatani Muneyoshi,Shirasawa Katsuhiko,Huang Xinming,Uda Satoshi,Hoshikawa Keigo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. P. Maycock (Ed.), Photovoltaic News, April 2004, p. 2.

2. Solar cell efficiency tables (version 22)

3. Carrier transport at grain boundaries in semiconductors

4. Hydrogen passivation of defects in silicon ribbon grown by the edge‐defined film‐fed growth process

5. B. Huang, in: 15th International Photovoltaic Science and Engineering Conference, Shanghai, China, 2005, p. 424.

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