Dislocation reduction in AlGaN grown on patterned GaN-Reference-Cited by-同舟云学术

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Dislocation reduction in AlGaN grown on patterned GaN

Published:2008-02 Issue:4 Volume:310 Page:766-776
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Follstaedt D.M.,Allerman A.A.,Lee S.R.,Michael J.R.,Bogart K.H.A.,Crawford M.H.,Missert N.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. The Blue Laser Diode;Nakamura,1997

2. Mid-Ultraviolet Light-Emitting Diode Detects Dipicolinic Acid

3. Fabrication of UV devices on various plane substrates

4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures

5. Low-dislocation-density GaN from a single growth on a textured substrate

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1. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes;Applied Physics Letters;2023-09-25

2. Non-planar growth of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness;Journal of Crystal Growth;2023-04

3. Core–shell GaN/AlGaN nanowires grown by selective area epitaxy;Nanoscale Horizons;2023

4. Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for UV LEDs and Laser Diodes;CLEO 2023;2023

5. Realizing crack-free high-aluminum-mole-fraction AlGaN on patterned GaN beyond the critical layer thickness;Journal of Applied Physics;2022-02-21

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