Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor-Reference-Cited by-同舟云学术

Growth of Ge epilayers using iso-butylgermane (IBGe) and its memory effect in an III-V chemical beam epitaxy reactor

Published:2020-10 Issue: Volume:547 Page:125807
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Poungoué Mbeunmi Alex Brice,Arvinte Roxana,Pelletier Hubert,Jellite Mourad,Arès Richard,Fafard Simon,Boucherif Abderraouf

Funder

Natural Sciences and Engineering Research Council of Canada

Fonds de recherche du Québec – Nature et technologies

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

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