Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures-Reference-Cited by-同舟云学术

Molecular beam epitaxy growth of InSb/GaAs quantum nanostructures

Published:2017-11 Issue: Volume:477 Page:30-33
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thainoi Supachok,Kiravittaya Suwit^ORCID,Poempool Thanavorn,Zon ,Nuntawong Noppadon,Sopitpan Suwat,Kanjanachuchai Songphol,Ratanathammaphan Somchai,Panyakeow Somsak

Funder

Research Chair Grant

National Science and Technology Development Agency

Asian Office of Aerospace Research and Development

Thailand Research Fund

National Nanotechnology Center

ASEAN University Network/Southeast Asia Engineering Education Development Network

Chulalongkorn University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Self-assembled InSb and GaSb quantum dots on GaAs(001)

2. The formation of high number density InSb quantum dots, resulting from direct InSb/GaSb (001) heteroepitaxy

3. High-temperature interfacial electroluminescence in type-II broken-gap heterostructures based on InSb quantum dashes in n-InAs matrix

4. Photoluminescence and photoresponse from InSb/InAs-based quantum dot structures

5. Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

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