InGaAsBi materials grown by gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

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InGaAsBi materials grown by gas source molecular beam epitaxy

Published:2017-11 Issue: Volume:477 Page:135-138
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ai Likun,Zhou Shuxing,Qi Ming,Xu Anhuai,Wang Shumin

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Valence band anticrossing in GaBixAs1−x;Alberi;Appl. Phys. Lett.,2007

2. Giant spin-orbit bowing in GaAs1−xBix;Fluegel;Phys. Rev. Lett.,2006

3. Contactless electroreflectance study of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys;Kudrawiec;Appl. Phys. Lett.,2011

4. Calculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors: effects of p1/2 local orbitals and chemical trends;Carrier;Phys. Rev. B,2004

5. Proposal on a temperature insensitive wavelength semiconductor laser;Oe;IEICE Trans. Electron.,1996

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of InxAl1-xAs graded buffer materials on pseudomorphic InP HEMT;Frontiers in Materials;2022-08-25

2. Band gap energy of the As-rich InxGa1-xBiyAs1-y depending on composition;Infrared Physics & Technology;2021-06

3. Dilute bismide and nitride alloys for mid-IR optoelectronic devices;Mid-infrared Optoelectronics;2020

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