Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy-Reference-Cited by-同舟云学术

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Bandedge absorption of GaAsN films measured by the photothermal deflection spectroscopy

Published:2009-03 Issue:7 Volume:311 Page:1662-1665
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Beaudoin M.,Chan I.C.W.,Beaton D.,Elouneg-Jamroz M.,Tiedje T.,Whitwick M.,Young E.C.,Young J.F.,Zangenberg N.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source

2. Surfactant enhanced growth of GaNAs and InGaNAs using bismuth

3. GaInNAs for GaAs based lasers for the 1.3 to 1.5μm range

4. Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1 mW

5. Thermo‐optical spectroscopy: Detection by the ’’mirage effect’’

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