Analysis of germanium epiready wafers for III–V heteroepitaxy

Author:

Rey-Stolle Ignacio,Barrigón Enrique,Galiana Beatriz,Algora Carlos

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Germanium: From the first application of Czochralski crystal growth to large diameter dislocation-free wafers

2. K. Dessein, Role of the germanium substrate manufacturer in the CPV market, in: Presentation Given at 2007 Marburg Workshop on Concentrating Photovoltaic Optics and Power, downloadable at 〈http://concentrating-pv.org/papers.html〉.

3. Compound Semiconductor Industry September–December 2007 Review: Materials and Equipment, Strategy Analytics Report, October 2007.

4. K. Dessein, B. Depuydt, W. Geens and C. Quaeyhaegens, Zooming in on the surface of state-of-the-art germanium wafers, Paper Presented at ALTECH 07: Analytical Techniques for Semiconductor Materials and Process Characterization V, Munich (Germany), September 2007. Abstract downloadable at 〈http://www.chemie.uni-frankfurt.de/aac/ak_kolbesen/english/conferences/abstractfolder/Dessein_Umicore_abstr_ALTECH-2007_v2.pdf〉.

5. Optical characterization of dislocation free Ge and GeOI wafers

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