Analysis of impurity transport and deposition processes on the furnace elements during Cz silicon growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference5 articles.
1. Modelling Analysis of Oxygen Transport During Czochralski Growth of Silicon Crystals
2. Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface
3. Development of oxygen transport model in Czochralski growth of silicon crystals
4. I.N. Przhevalsky, STR Group Ltd., private communications.
5. Preparation of Bismuth Silicate Films on Si Wafer by Metalorganic Chemical Vapor Deposition
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