Growth behavior and mechanism of atomic layer deposition of Ru for replacing Cu-interconnects
Author:
Funder
Xiamen University
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference64 articles.
1. Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy;Egorov;Appl. Surf. Sci.,2017
2. Atomic layer deposition of ruthenium using the novel precursor bis(2,6,6-trimethyl-cyclohexadienyl)ruthenium;Gregorczyk;Chem. Mater.,2011
3. Atomic layer deposition of Ru for replacing Cu-interconnects;Kotsugi;Chem. Mater.,2021
4. Effects of annealing on the properties of atomic layer deposited Ru thin films deposited by NH3 and H2 as reactants;Lee;Thin Solid Films,2016
5. Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis(5-methyl-2,4-hexanediketonato)ruthenium(II) and oxygen;Ko;Mater. Sci. Semicond. Process.,2023
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