High-rate, room-temperature synthesis of amorphous silicon carbide films from organo-silicon in high-density helicon wave plasma-Reference-Cited by-同舟云学术

High-rate, room-temperature synthesis of amorphous silicon carbide films from organo-silicon in high-density helicon wave plasma

Published:2019-06 Issue: Volume:164 Page:355-360
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Ma Xiao,Xu Dongsheng,Ji Peiyu,Jin Chenggang,Lin James,Ding Yuqiang,Xu Chongying

Funder

project of manufacturing technology and complete sets of technology

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation

Reference37 articles.

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4. Hydrogen sensitivity of the sensors based on nanostructured lead sulfide thin films deposited on a-SiC: H and p-Si (100) substrates;Kaci;Vacuum,2015

5. On the hydrogenated silicon carbide (SiCx: H) interlayer properties prompting adhesion of hydrogenated amorphous carbon (aC: H) deposited on steel;Cemin;Vacuum,2014

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