Atomic diffusion and interface reaction of Cu/Si (111) films prepared by ionized cluster beam deposition
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference19 articles.
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2. Diffusion barrier performances of thin Mo, Mo–N and Mo/Mo–N films between Cu and Si;Song;Thin Solid Films,2005
3. Cu contact on NiSi/Si with thin Ru/TaN barrier;Zhao;Microelectron Eng,2011
4. Behaviour of copper atoms in annealed Cu/SiOx/Si systems;Benouattas;Appl Surf Sci,2000
5. Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems;Cao;Acta Phys Sin,2006
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