Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering-Reference-Cited by-同舟云学术

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Optimization of high-quality gallium nitride thin films deposited on silicon substrates with an aluminum nitride buffer layer through radio-frequency magnetron sputtering

Published:2024-09 Issue: Volume:227 Page:113352
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Liu Wei-Sheng^ORCID,Wu Sui-Hua,Balaji G.^ORCID,Huang Li-Cheng,Chi Chung-Kai,Kuo Hsing-Chun

Funder

National Science and Technology Council

National Central University

Ministry of Science and Technology, Taiwan

Publisher

Elsevier BV

Reference65 articles.

1. Progress and prospects of group-III nitride semiconductors;Mohammad;Prog. Quant. Electron.,1996

2. GaN, AlN, and InN: a review;Strite;J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,1992

3. Pyroelectricity with an extra-polarization effect in AlN/GaN heterostructures;Hansdah;Mater. Today: Proc.,2021

4. Review of GaN optical device characteristics, applications, and optical analysis technology;Amir;Mater. Today: Proc.,2021

5. High breakdown GaN HEMT with overlapping gate structure;Zhang;IEEE Electron. Device Lett.,2000

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